fgaf40n60uf ? 600 v pt igbt november 2013 ?2004 fairchild semiconductor corporation www.fairchildsemi.com fgaf40n60uf rev. c1 fgaf40n60uf 600 v pt igbt general description fairchild's uf series of ig bts provide low conduction and switching losses. the uf series is designed for applications such as general inverters and pfc where high speed switching is a required feature. features ? high speed switching ? low saturation voltage: v ce(sat) = 2.3 v @ i c = 20 a ? high input impedance absolute maximum ratings t c = 25 ? c unless otherwise noted notes : (1) repetitive rating : pulse width limited by max. junction temperature thermal characteristics symbol description ratings unit v ces collector-emitter voltage 600 v v ges gate-emitter voltage ? 20 v i c collector current @ t c = 25 ? c40 a collector current @ t c = 100 ? c20 a i cm (1) pulsed collector current 160 a p d maximum power dissipation @ t c = 25 ? c 100 w maximum power dissipation @ t c = 100 ? c40 w t j operating junction temperature -55 to +150 ? c t stg storage temperature range -55 to +150 ? c t l maximum lead temp. for soldering purposes, 1/8? from case for 5 seconds 300 ? c symbol parameter typ. max. unit r ? jc (igbt) thermal resistance, junction-to-case -- 1.2 ? c / w r ? ja thermal resistance, junction-to-ambient -- 40 ? c / w applications general inverter, pfc g c e to-3pf g c e g c e
fgaf40n60uf ? 600 v pt igbt ?2004 fairchild semiconductor corporation www.fairchildsemi.com fgaf40n60uf rev. c1 electrical characteris tics of the igbt t c = 25 ? c unless otherwise noted symbol parameter test conditions min. typ. max. unit off characteristics bv ces collector-emitter breakdown voltage v ge = 0 v, i c = 250 ua 600 -- -- v ? b vces / ? t j temperature coefficient of breakdown voltage v ge = 0 v, i c = 1 ma -- 0.6 -- v/ ? c i ces collector cut-off current v ce = v ces , v ge = 0 v -- -- 250 ua i ges g-e leakage current v ge = v ges , v ce = 0 v -- -- 100 na on characteristics v ge(th) g-e threshold voltage i c = 20 ma, v ce = v ge 3.5 5.1 6.5 v v ce(sat) collector to emitter saturation voltage i c = 20 a , v ge = 15 v -- 2.3 3.0 v i c = 40 a , v ge = 15 v -- 3.1 -- v dynamic characteristics c ies input capacitance v ce = 30 v , v ge = 0 v, f = 1 mhz -- 1075 -- pf c oes output capacitance -- 170 -- pf c res reverse transfer capacitance -- 50 -- pf switching characteristics t d(on) turn-on delay time v cc = 300 v, i c = 20 a, r g = 10 ? , v ge = 15 v, inductive load, t c = 25 ? c -- 15 -- ns t r rise time -- 30 -- ns t d(off) turn-off delay time -- 65 130 ns t f fall time -- 35 100 ns e on turn-on switching loss -- 470 -- uj e off turn-off switching loss -- 130 -- uj e ts total switching loss -- 600 1000 uj t d(on) turn-on delay time v cc = 300 v, i c = 20 a, r g = 10 ? , v ge = 15 v , inductive load, t c = 125 ? c -- 30 -- ns t r rise time -- 37 -- ns t d(off) turn-off delay time -- 110 200 ns t f fall time -- 80 250 ns e on turn - on switching loss -- 500 -- uj e off turn - off switching loss -- 310 -- uj e ts total switching loss -- 810 1200 uj q g total gate charge v ce = 300 v, i c = 20 a, v ge = 15 v -- 77 150 nc q ge gate-emitter charge -- 20 30 nc q gc gate-collector charge -- 25 40 nc l e internal emitter inductance measured 5mm from pkg -- 14 -- nh
fgaf40n60uf ? 600 v pt igbt ?2004 fairchild semiconductor corporation www.fairchildsemi.com fgaf40n60uf rev. c1 0.1 1 10 100 1000 0 5 10 15 20 25 30 vcc = 300v load current : peak of square wave duty cycle : 50% tc = 100 powe dissipation = 24w load current [a] frequency [khz] fig 1. typical output characteristics fig 2. typical saturation voltage characteristics fig 4. load current vs. frequency fig 5. saturation voltage vs. v ge fig 6. saturation voltage vs. v ge 02468 0 40 80 120 160 12v 15v 20v v ge = 10v common emitter tc = 25 collector current, i c (a) collector-emitter voltage,v ce (v) 110 0 10 20 30 40 50 60 70 80 0.5 common emitter v ge =15v tc= 25 tc= 125 collector current , ic (a) collector-emitter voltage, v ce (v) 0306090120150 0 1 2 3 4 20a ic=10a 40a common emitter vge=15v case temperature, t c [] collector - emitter voltage, v ce [v] 048121620 0 4 8 12 16 20 40a 20a i c = 10a common emitter t c = 25 gate - emitter voltage, v ge [v] collector - emitter voltage, v ce [v] 0 4 8 121620 0 4 8 12 16 20 20a 40a ic=10a common emitter t c = 125 collector - emitter voltage, v ce [v] gate - emitter voltage, v ge [v] fig 3. saturation voltage vs. case temper ature at variant current level
fgaf40n60uf ? 600 v pt igbt ?2004 fairchild semiconductor corporation www.fairchildsemi.com fgaf40n60uf rev. c1 fig 7. capacitance characteristics fig 8. turn-on characteristics vs. gate resistance fig 9. turn-off characteristics vs. gate resistance fig 10. switching loss vs. gate resistance fig 11. turn-on characteristics vs. collector current fig 12. turn-off characteristics vs. collector current 110 0 500 1000 1500 2000 2500 3000 common emitter v ge = 0v, f = 1mhz t c = 25 30 cres coes cies capacitance (pf) collector-emitter voltage, v ce (v) 110100 100 1000 20 200 tf common emitter vcc=300v,v ge = 15v ic=20a tc = 25 tc = 125 toff tf switching time (ns) gate resistance, r g ( ? ) 1 10 100 100 1000 2000 50 200 eon eoff common emitter vcc=300v,v ge = 15v ic=20a tc = 25 tc = 125 switching time (uj) gate resistance, r g ( ? ) 10 15 20 25 30 35 40 10 100 200 tr ton collector current, ic (a) switching time (ns) common emitter v cc = 300v, v ge = 15v r g = 10 ? t c = 25 t c = 125 10 15 20 25 30 35 40 100 1000 20 tf toff common emitter v cc = 300v, v ge = 15v r g = 10 ? t c = 25 t c = 125 collector current, i c [a] switching time [ns] toff tf 1 10 100 10 100 200 300 ton tr common emitter vcc=300v,v ge = 15v ic=20a tc = 25 tc = 125 - - - - switching time (ns) gate resistance, r g ( ? )
fgaf40n60uf ? 600 v pt igbt ?2004 fairchild semiconductor corporation www.fairchildsemi.com fgaf40n60uf rev. c1 1e-5 1e-4 1e-3 0.01 0.1 1 10 0.01 0.1 1 0.5 0.2 0.1 0.05 0.02 0.01 single pulse thermal response [zthjc] rectangular pulse duration [sec] 1 10 100 1000 0.1 1 10 100 500 safe operating area v ge =20v, t c =100 o c collector current, i c [a] collector-emitter voltage, v ce [v] fig 14. gate charge characteristics fig 15. soa characteristics fig 16. turn-off soa characteristics fig 13. switching loss vs. collector current pdm t1 t2 duty factor d = t1 / t2 peak tj = pdm ? zthjc + t c fig 17. transient thermal impedance of igbt 10 15 20 25 30 35 40 10 100 1000 3000 eoff switching time (uj) eon eoff common emitter v cc = 300v, v ge = 15v r g = 10 ? t c = 25 t c = 125 collector current , ic (a) 0 30 60 90 120 0 3 6 9 12 15 200v 300v vcc=100v common emitter r l =15 ? (tc=25 ) gate-emitter voltage, v ge (v) gate charge, qg (nc) 1 10 100 1000 0.1 1 10 100 50 ? s 100 ? s 1ms dc operation ic max (pulsed) ic max (continuous) single nonrepetitive pulse tc = 25 o c curves must be derated linearly with increase in temperature collector current, ic [a] collector - emitter voltage, v ce [v]
fgaf40n60uf ? 600 v pt igbt ?2004 fairchild semiconductor corporation www.fairchildsemi.com fgaf40n60uf rev. c1 mechanical dimensions figure 18. to3pf,molded,3ld,fullpack (ag) package drawings are provided as a service to customers considering fairchil d components. drawings may change in any manner without notice. please note the revision and/or date on the draw ing and contact a fairchild semiconductor representative to ver ify or obtain the most recent revision. package specifications do not expand the terms of fairchild?s worldwide terms and conditions, specif- ically the warranty therein, wh ich covers fairchild products. always visit fairchild semiconductor?s online pack aging area for the most recent package drawings: http://www.fairchildsemi.com/package/pa ckagedetails.html?id=pn_tf3pf-003
fgaf40n60uf ? 600 v pt igbt ?2004 fairchild semiconductor corporation www.fairchildsemi.com fgaf40n60uf rev. c1 trademarks the following includes registered and unregistered trademarks and service marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes withou t further notice to any products herein to improve reliability, function, or design. fairchild does not assume an y liability arising out of th e application or use of any product or circuit described herein; neither does it convey an y license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s worldwide terms and conditio ns, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized fo r use as critical components in life support devices or systems without the express written approval of fa irchild semiconductor corporation. as used here in: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform w hen properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms accupower? ax-cap ? * bitsic? build it now? coreplus? corepower? crossvolt ? ctl? current transfer logic? deuxpeed ? dual cool? ecospark ? efficentmax? esbc? fairchild ? fairchild semiconductor ? fact quiet series? fact ? fast ? fastvcore? fetbench? fps? f-pfs? frfet ? global power resource sm greenbridge? green fps? green fps? e-series? g max ? gto? intellimax? isoplanar? marking small speakers sound louder and better? megabuck? microcoupler? microfet? micropak? micropak2? millerdrive? motionmax? mwsaver ? optohit? optologic ? optoplanar ? powertrench ? powerxs? programmable active droop? qfet ? qs? quiet series? rapidconfigure? saving our world, 1mw/w/kw at a time? signalwise? smartmax? smart start? solutions for your success? spm ? stealth? superfet ? supersot?-3 supersot?-6 supersot?-8 supremos ? syncfet? sync-lock? ?* tinyboost ? tinybuck ? tinycalc? tinylogic ? tinyopto? tinypower? tinypwm? tinywire? transic? trifault detect? truecurrent ? * ? serdes? uhc ? ultra frfet? unifet? vcx? visualmax? voltageplus? xs? ? ? datasheet identification product status definition advance information formative / in design datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production datasheet contains preliminary data; supplementary data will be published at a later date. fairchild semiconductor reserves the ri ght to make changes at any time without notice to improve design. no identification needed full production datasheet contains final specifications. fair child semiconductor reserves the right to make changes at any time without notice to improve the design. obsolete not in production datasheet contains specifications on a product t hat is discontinued by fairchild semiconductor. the datasheet is for reference information only. anti-counterfeiting policy fairchild semiconductor corporation?s anti-counterfeiting policy. fairchild?s anti-counterfeiting policy is also stated on our external website, www.fairchildsemi.com, under sales support . counterfeiting of semiconductor parts is a growing problem in th e industry. all manufactures of semiconductor products are expe riencing counterfeiting of their parts. customers who inadvertently purchase counterfeit parts ex perience many problems such as loss of brand reputation, substa ndard performance, failed application, and increased cost of production and manufacturing dela ys. fairchild is taking strong measures to protect ourselve s and our customers from the proliferation of counterfeit parts. fairchild strongly encourages customers to purchase fairchild parts either directly from fa irchild or from authorized fairchild distributors who are listed by country on our web page cited above . products customers buy either from fairchild directly or fr om authorized fairchild distributors are genuine parts, have full traceability, meet fairchild?s quality standards for handing and storage and provide access to fairchild?s full range of up-to-date technical and product information. fairchild and our authorized distributors will stand behind all warranties and wi ll appropriately address and warranty issues that may arise. fairchild will not provide any warranty coverage or other assistance for parts bought from unau thorized sources. fairchild is committed to combat this global problem and encourage our customer s to do their part in stopping th is practice by buying direct or from authorized distributors. rev. i66 ?
|
